BTB08 View Datasheet(PDF) - Sirectifier Electronics
Part Name
Description
Manufacturer
BTB08 Datasheet PDF : 5 Pages
| |||
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
F ig. 6: Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
ITS M (A), I² t (A² s )
1000
T j initial=25° C
100
dI/dt limitation:
50A /µs
10
0.01
tp (ms )
0.10
1.00
ITS M
I² t
10.00
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
2.5
2.0
IG T
1.5
IH & IL
1.0
0.5
Tj(° C )
0.0
-40 -20 0 20 40 60 80 100 120 140
F ig. 8-1: R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ). S nubberles s & L ogic L evel Types
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.2
2.0 TW
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV /dt)c (V /µs )
1.0
10.0
T 835/C W/B W
T 810/S W
100.0
F ig. 8-2: R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typical
values ). S tandard Types
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8
1.6
C
1.4 B
1.2
1.0
0.8
0.6
(dV /dt)c (V /µs )
0.4
0.1
1.0
10.0
100.0
F ig. 9: R elative varia tion of critical rate of
decreas e of main current vers us junction
te mpe ra ture.
F ig. 10: DPAK and D2PAK T hermal resis tance
junction to ambient vers us copper s urface under
tab (printed circuit board F R 4, copper thicknes s :
35 ∝m).
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1
Tj(° C )
0
0
25
50
75
R th(j-a) (° C /W)
100
90
80
70
60
50
DPAK
40
30
D² PAK
20
10
S (cm² )
100
125
0
0 4 8 12 16 20 24 28 32 36 40
|
|
Share Link: 