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BTB08 View Datasheet(PDF) - Sirectifier Electronics

Part NameBTB08 Sirectifier
Sirectifier Electronics Sirectifier
DescriptionDiscrete Triacs(Non-Isolated/Isolated)
BTB08 Datasheet PDF : 5 Pages
1 2 3 4 5
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
G
T2
T1
T2
G
T1
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
IT(RMS) RMS on-state current (full sine wave)
TO-220AB
Tc = 110°C
ITSM
I²t
dI/dt
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x I GT , tr <_ 100 ns
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 125°C
Tj = 125°C
Value
8
84
80
36
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
A
W
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB
IGT (1)
VGT
VD = 12 V
RL = 30
I - II - III
I - II - III
VGD VD = VDRM RL = 3.3 kTj = 125°C I - II - III
IH (2) IT = 100 mA
IL
IG = 1.2 IGT
I - III
II
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
CW
BW
35
50
1.3
0.2
35
50
50
70
60
80
400
1000
4.5
7
Unit
mA
V
V
mA
mA
V/µs
A/ms
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