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T1250-800R-TR View Datasheet(PDF) - STMicroelectronics

Part NameT1250-800R-TR ST-Microelectronics
STMicroelectronics ST-Microelectronics
Description12 A Snubberless™, logic level and standard triacs
T1250-800R-TR Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BTA12, BTB12, T12xx
Characteristics
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
Figure 8: Relative variation of gate
trigger current, holding current and
latching current versus junction
temperature (typical values)
ITSM(A), I2t (A2s)
1000
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
IGT
1.5
100
I2t
IH & IL
1.0
10
0.01
tp(ms)
0.10
1.00
0.5
Tj(°C)
0.0
10.00
-40 -20
0
20
40
60
80 100 120 140
Figure 9.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(BW/CW/T1210/T1235)
Figure 10.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values) (TW)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.8
2.4
2.0
T1210/SW
C
1.6
B
1.2
0.8
0.4
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
T1235/T1250/CW/BW
100.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
4.5
4.0
TW
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
100.0
Figure 11.
Relative variation of critical rate of
decrease of main current versus
junction temperature
Figure 12.
D2PAK thermal resistance junction
to ambient versus copper surface
under tab (printed circuit board
FR4, copper thickness: 35 µm)
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
Rth(j-a)(°C/W)
80
5
70
60
4
50
3
40
D2PAK
30
2
20
1
10
Tj(°C)
0
0
S(cm²)
0
4
8
12 16 20 24 28 32 36 40
0
25
50
75
100
125
5/12
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