Transistors,MosFET ,Diode,Integrated circuits

# T1250-800R-TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
T1250-800R-TR Datasheet PDF : 12 Pages
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Characteristics
BTA12, BTB12, T12xx
Figure 1. Maximum power dissipation versus Figure 2. RMS on-state current versus case
RMS on-state current (full cycle)
temperature (full cycle)
P(W)
16
IT(RMS)(A)
14
13
14
12
12
11
10
10
9
8
8
7
6
6
5
4
4
3
2
IT(RMS)(A)
2
1
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12
0
25
BTB / T12
BTA
TC(°C)
50
75
100
125
Figure 3.
RMS on-state current versus
ambient temperature (printed
circuit board FR4, copper
thickness: 35µm) (full cycle)
IT(RMS)(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
D2PAK
(S=1cm2)
TC(°C)
50
75
100
Figure 4. Relative variation of thermal
impedance versus pulse duration
K=[Zth/Rth]
1E+0
Zth(j-c)
1E-1
Zth(j-a)
1E-2
125
1E-3
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
Figure 5. On-state characteristics (maximum Figure 6. Surge peak on-state current versus
values)
number of cycles
ITM(A)
100
ITSM(A)
130
Tj max.
Vto = 0.85V
Rd = 35 mΩ
120
110
100
Tj = Tj max.
90
80
10
Tj = 25°C.
70
60
Repetitive
50
TC=90°C
40
30
20
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
10
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10
100
t=20ms
One cycle
1000
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