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T1250-800R-TR View Datasheet(PDF) - STMicroelectronics

Part NameT1250-800R-TR ST-Microelectronics
STMicroelectronics ST-Microelectronics
Description12 A Snubberless™, logic level and standard triacs
T1250-800R-TR Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BTA12, BTB12, T12xx
Characteristics
Table 4.
Symbol
Electrical characteristics (Tj = 25°C, unless otherwise specified)
standard (4 quadrants)
Test Conditions
Quadrant
BTA12 / BTB12
C
B
IGT (1)
VGT
VGD
IH (2)
VD = 12 V RL = 30 Ω
VD = VDRM RL = 3.3 kΩ Tj = 125° C
IT = 500 mA
IL
IG = 1.2 IGT
dV/dt (2) VD = 67% VDRM gate open Tj = 125° C
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms Tj = 125° C
1. Minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
I - II - III
IV
ALL
ALL
I - III - IV
II
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
25
50
50
100
1.3
0.2
25
50
40
50
80
100
200
400
5
10
Table 5. Static characteristics
Symbol
Test conditions
VT (1)
Vt0 (1)
Rd (1)
ITM = 17 A tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
1. for both polarities of A2 referenced to A1
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj= 125° C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
35
5
1
Table 6. Thermal resistance
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
Parameter
I2PAK / D2PAK / TO-220AB
TO-220AB insulated
S(1) = 1 cm2 D2PAK
TO-220AB / I2PAK
TO-220AB insulated
Value
1.4
2.3
45
60
1. Copper surface under tab.
Unit
mA
V
V
mA
mA
V/µs
V/µs
Unit
V
V
mΩ
µA
mA
Unit
°C/W
°C/W
3/12
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