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T1250-800R-TR View Datasheet(PDF) - STMicroelectronics

Part NameT1250-800R-TR ST-Microelectronics
STMicroelectronics ST-Microelectronics
Description12 A Snubberless™, logic level and standard triacs
T1250-800R-TR Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Characteristics
1
Characteristics
BTA12, BTB12, T12xx
Table 2. Absolute maximum ratings
Symbol
Parameter
IT(RMS)
RMS on-state current
(full sine wave)
I2PAK / D2PAK /
TO-220AB
TO-220AB Ins.
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
I2t
I2t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Value
Unit
Tc = 105° C
12
A
Tc = 90° C
t = 20 ms
120
A
t = 16.7 ms
126
78
A²s
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
A/µs
V
A
W
°C
Table 3.
Electrical characteristics (Tj = 25°C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol Test conditions Quadrant
T12xx
BTA12 / BTB12
Unit
T1210 T1235 T1250 TW SW CW BW
IGT (1)
VGT
VGD
IH (2)
VD = 12 V
RL = 30 Ω
VD = VDRM
RL = 3.3 kΩ
Tj = 125° C
IT = 100 mA
IL
IG = 1.2 IGT
I - II - III MAX. 10
35
50
5 10 35 50 mA
I - II - III MAX.
1.3
V
I - II - III MIN.
0.2
V
MAX. 15
35
50 10 15 35 50 mA
I - III
25
50
70 10 25 50 70
MAX.
mA
II
30
60
80 15 30 60 80
dV/dt (2)
(dI/dt)c (2)
VD = 67 %VDRM gate open
Tj = 125° C
(dV/dt)c = 0.1 V/µs
Tj = 125° C
(dV/dt)c = 10 V/µs
Tj = 125° C
Without snubber
Tj= 125° C
MIN. 40 500 1000 20 40 500 1000 V/µs
6.5
3.5 6.5
MIN. 2.9
1 2.9
A/ms
6.5
12
6.5 12
1. Minimum IGT is guaranted at 5% of IGT max
2. for both polarities of A2 referenced to A1
2/12
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