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BTB04-600 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
BTB04-600
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTB04-600 Datasheet PDF : 5 Pages
1 2 3 4 5
BTA04 T/D/S/A / BTB04 T/D/S/A
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-a) Junction to ambient
60
°C/W
Rth (j-c) DC Junction to case for DC
BTA
4.4
°C/W
BTB
3.2
Rth (j-c) AC Junction to case for 360° conduction angle
BTA
( F= 50 Hz)
BTB
3.3
°C/W
2.4
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 4A (tp = 20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
T
D
S
A
IGT
VD=12V (DC) RL=33Tj=25°C
I-II-II I
IV
MAX 5
5 10 10 mA
MAX 5 10 10 25
VGT
VD=12V (DC) RL=33Tj=25°C
I-II-III-IV MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=110°C I-II-III-IV MIN
0.2
V
tgt
VD=VDRM IG = 40mA
Tj=25°C I-II-III-IV TYP
2
µs
dIG/dt = 0.5A/µs
IL
IG= 1.2 IGT
Tj=25°C
I-III-IV
TYP 10 10 20 20 mA
II
20 20 40 40
IH *
VTM *
IDRM
IRRM
dV/dt *
IT= 100mA gate open
ITM= 5.5A tp= 380µs
VDRM Rated
VRRM Rated
Linear slope up to
VD=67%VDRM
gate open
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
Tj=110°C
MAX 15 15 25 25 mA
MAX
1.65
V
MAX
0.01
mA
MAX
0.75
TYP 10 10
-
-
V/µs
MIN
-
-
10 10
(dV/dt)c * (dI/dt)c = 1.8A/ms
Tj=110°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
TYP 1
1
5
5 V/µs
2/5
 

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