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BTA06-600TW View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BTA06-600TW 6A TRIACS ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTA06-600TW Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BTA06 and BTB06 Series
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
ITSM(A)
70
60
50
40
30
Repetitive
TC=105°C
20
10
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10
100
t=20ms
One cycle
1000
ITSM(A), I2t (A2s)
1000
100
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
10
0.01
tp(ms)
0.10
1.00
I2t
10.00
Figure 7: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Snubberless & logic level
types)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20
0
20 40 60 80 100 120 140
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
TW
1.2
1.0
SW
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
BW/CW
100.0
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Standard types)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
C
1.4
1.2 B
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj(°C)
0
100.0
0
25
50
75
100
125
4/7
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