Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BTA06-800BW View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BTA06-800BW 6A TRIACS ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTA06-800BW Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BTA06 and BTB06 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
SNUBBERLESS and Logic Level (3 quadrants)
Symbol
Test Conditions
Quadrant
BTA06 / BTB06
TW SW CW BW
IGT (1)
VGT
VD = 12 V RL = 30
I - II - III MAX. 5
I - II - III MAX.
10 35 50
1.3
VGD
VD = VDRM RL = 3.3 k
Tj = 125°C
I - II - III MIN.
0.2
IH (2) IT = 100 mA
MAX. 10 15 35 50
IL
IG = 1.2 IGT
I - III
10 25 50 70
MAX.
II
15 30 60 80
dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C
MIN. 20
40 400 1000
(dV/dt)c = 0.1 V/µs Tj = 125°C
2.7 3.5
-
-
(dI/dt)c (2) (dV/dt)c = 10 V/µs Tj = 125°C
MIN. 1.2 2.4
-
-
Without snubber Tj = 125°C
-
-
3.5 5.3
Unit
mA
V
V
mA
mA
V/µs
A/ms
Standard (4 quadrants)
Symbol
Test Conditions
Quadrant
IGT (1)
VGT
VD = 12 V
RL = 30
I - II - III
IV
ALL
VGD VD = VDRM RL = 3.3 kTj = 125°C
ALL
IH (2) IT = 500 mA
IL
IG = 1.2 IGT
I - III - IV
II
dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
BTA06 / BTB06
C
B
25
50
50
100
1.3
0.2
25
50
40
50
80
100
200
400
5
10
Unit
mA
V
V
mA
mA
V/µs
V/µs
Table 5: Static Characteristics
Symbol
Test Conditions
VTM (2) ITM = 8.5 A tp = 380 µs
Tj = 25°C
Vt0 (2) Threshold voltage
Tj = 125°C
Rd (2) Dynamic resistance
Tj = 125°C
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
MAX.
MAX.
MAX.
MAX.
Value
Unit
1.55
V
0.85
V
60
m
5
µA
1
mA
2/7
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]