BSP 149
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Values
Unit
typ.
max.
Static Characteristics
Drain-source breakdown voltage
VGS = − 3 V, ID = 0.25 mA
Gate threshold voltage
VDS = 3 V, ID = 1 mA
Drain-source cutoff current
VDS = 200 V, VGS = − 3 V
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0
Drain-source on-resistance
VGS = 0 V, ID = 0.03 A
V(BR)DSS
V
200
–
–
VGS(th)
− 1.8
− 1.2
− 0.7
IDSS
µA
–
–
IGSS
–
RDS(on)
–
–
0.2
–
200
nA
10
100
Ω
2.5
3.5
Dynamic Characteristics
Forward transconductance
gfs
VDS ≥ 2 × ID × R , DS(on)max ID = 0.48 A
Input capacitance
Ciss
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
Coss
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
td(on)
VDD = 30 V, VGS = − 2 ... + 5 V, RGS = 50 Ω,
ID = 0.29 A
tr
Turn-off time toff, (toff = td(off) + tf)
td(off)
VDD = 30 V, VGS = − 2 ... + 5 V, RGS = 50 Ω,
ID = 0.29 A
tf
S
0.4
0.75
–
pF
–
500
670
–
40
60
–
12
20
–
7
10
ns
–
20
30
–
60
80
–
50
65
Semiconductor Group
2