BS62LV4006DC-55 View Datasheet(PDF) - Brilliance Semiconductor

Part Name

Description

Manufacturer

BS62LV4006DC-55

VeryLow Power CMOS SRAM 512K X 8 bit

Brilliance Semiconductor 

Very Low Power CMOS SRAM

512K X 8 bit

Pb-Free and Green package materials are compliant to RoHS

BS62LV4006

n FEATURES

Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V

Ÿ Very low power consumption :

VCC = 3.0V Operation current : 30mA (Max.) at 55ns

2mA (Max.) at 1MHz

Standby current : 0.25uA (Typ.)at 25 OC

VCC = 5.0V Operation current : 70mA (Max.) at 55ns

10mA (Max.) at 1MHz

Standby current : 1.5uA (Typ.) at 25OC

Ÿ High speed access time :

-55

55ns (Max.) at VCC=3.0~5.5V

-70

70ns (Max.) at VCC=2.7~5.5V

Ÿ Automatic power down when chip is deselected

Ÿ Easy expansion with CE and OE options

Ÿ Three state outputs and TTL compatible

Ÿ Fully static operation

Ÿ Data retention supply voltage as low as 1.5V

n POWER CONSUMPTION

n DESCRIPTION

The BS62LV4006 is a high performance, very low power CMOS

Static Random Access Memory organized as 524,288 by 8 bits and

operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical CMOS standby

current of 0.25uA at 3.0V/25OC and maximum access time of 55ns at

3.0V/85OC.

Easy memory expansion is provided by an active LOW chip enable

(CE), and active LOW output enable (OE) and three-state output

drivers.

The BS62LV4006 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS62LV4006 is available in DICE form, JEDEC standard 32 pin

450mil Plastic SOP, 600mil Plastic DIP, 400 mil TSOP II,

8mmx13.4mm STSOP and 8mmx20mm TSOP package.

PRODUCT

FAMILY

OPERATING

TEMPERATURE

STANDBY

(ICCSB1, Max)

VCC=5.0V VCC=3.0V

BS62LV4006DC

BS62LV4006EC

BS62LV4006HC

BS62LV4006PC

BS62LV4006SC

BS62LV4006STC

BS62LV4006TC

BS62LV4006EI

BS62LV4006HI

BS62LV4006PI

BS62LV4006SI

BS62LV4006STI

BS62LV4006TI

Commercial

+0OC to +70OC

Industrial

-40OC to +85OC

10uA

20uA

2.0uA

4.0uA

POWER DISSIPATION

1MHz

VCC=5V

10MHz

Operating

(ICC, Max)

fMax.

1MHz

9mA 43mA 68mA 1.5mA

10mA 45mA 70mA 2mA

VCC=3V

10MHz

18mA

20mA

PKG TYPE

fMax.

29mA

30mA

DICE

TSOP II-32

BGA-36-0608

PDIP-32

SOP-32

STSOP-32

TSOP-32

TSOP II-32

BGA-36-0608

PDIP-32

SOP-32

STSOP-32

TSOP-32

n PIN CONFIGURATIONS

n BLOCK DIAGRAM

A11 1

A9 2

A8 3

A13 4

WE 5

A17 6

A15 7

VCC 8

A18 9

A16 10

A14 11

A12 12

A7 13

A6 14

A5 15

A4 16

BS62LV4006TC

BS62LV4006TI

BS62LV4006STC

BS62LV4006STI

32 OE

31 A10

30 CE

29 DQ7

28 DQ6

27 DQ5

26 DQ4

25 DQ3

24 GND

23 DQ2

22 DQ1

21 DQ0

20 A0

19 A1

18 A2

17 A3

A18

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

GND

1•

32

2

31

3

30

4

29

5

28

6

27

7 BS62LV4006EC 26

8 BS62LV4006EI 25

9 BS62LV4006SC 24

10

BS62LV4006SI

BS62LV4006PC

23

11 BS62LV4006PI 22

12

21

13

20

14

19

15

18

16

17

VCC

A15

A17

WE

A13

A8

A9

A11

OE

A10

CE

DQ7

DQ6

DQ5

DQ4

DQ3

1

2

3

4

5

6

A

A0

A1

NC

A3

A6

A8

B

DQ4 A2 WE A4

A7 DQ0

C

DQ5

NC A5

DQ1

D

VSS

VCC

E

VCC

VSS

F

DQ6

A18 A17

DQ2

G

DQ7 OE CE A16 A15 DQ3

H

A9 A10 A11 A12 A13 A14

A12

A14

A16

A18

A15

A17

A13

A8

A9

A11

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

CE

WE

OE

VCC

GND

Address

10

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 4096

8

8

Control

Data

Input

8

Buffer

Data

8

Output

Buffer

4096

Column I/O

Write Driver

Sense Amp

256

Column Decoder

9

Address Input Buffer

A7 A6 A5 A4 A3 A2 A1 A0 A0

36-ball BGA top view

Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.

R0201-BS62LV4006

1

Revision 1.4

May.

2006

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