Philips Semiconductors
HF/VHF power transistor
Product specification
BLW96
handbook−,2h5alfpage
d3, d5
(dB)
−35
d3
MGP692
d5
−45
0
100
200
300
P.E.P. (W)
VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
Fig.9 Intermodulation distortion as a function of
output power.(1)
100
handbook, halfpage
ηdt
(%)
75
Gp
MGP693
20
Gp
(dB)
15
50
10
ηdt
25
5
0
0
0
100
200
300
P.E.P. (W)
VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
Fig.10 Double-tone efficiency and power gain as a
function of output power.
Ruggedness
The BLW96 is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a
load mismatch (VSWR = 5 through all phases) up to
200 W (P.E.P.) under the following conditions:
VCE = 45 V; f = 28 MHz; Th = 70 °C; Rth mb-h = 0,2 K/W.
August 1986
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