BF1009SR(2004) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BF1009SR Datasheet PDF : 5 Pages
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BF1009S...
Silicon N_Channel MOSFET Tetrode
• For low noise, high gain controlled
input stage up to 1 GHz
• Operating voltage 9 V
• Integrated biasing network
AGC
G2
HF
G1
Input
Drain
HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1009S
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1009SR
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS ≤ 76 °C, BF1009S, BF1009SR
TS ≤ 94 °C, BF1009W
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
12
25
10
3
200
200
-55 ... 150
150
Marking
JLs
JLs
Unit
V
mA
V
mW
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1
Feb-18-2004
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