BF1105WR View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BF1105WR

N-channel dual-gate MOS-FETs

Philips Electronics 

Philips Semiconductors

N-channel dual-gate MOS-FETs

Product specification

BF1105; BF1105R; BF1105WR

handbook, full pagewidth

VAGC

VDS

1 nF

input

50 Ω

5.5 pF

C1

L1

1 nF

1 nF

1 nF

15

pF

1 nF

47 kΩ

L2

G2

D

BF1105

BF1105R

G1 BF1105WR S

2 µH

1 nF

10 pF

BB405

BB405

330 kΩ

1 nF

output

50 Ω

330 kΩ

1 nF

Vtun input

Vtun output MGM255

VDS = 5 V, GS= 2 mS, GL = 0.5 mS, f = 200 MHz.

L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire.

L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set GL = 0.5 mS.

C1 adjusted for GS = 2 mS.

Fig.16 Gain test circuit.

handbook, full pagewidth

VAGC

1 nF

VDS

1 nF

input

,,, ,,,,,,,, 1nF

47 kΩ

1 nF

L1

G2

D

BF1105

G1

BF1105R

BF1105WR

S

L3

L2

0.5 to 3.5 pF

1 nF

output

50 Ω

4 to 40 pF

50 Ω

2 to 18 pF

0.5 to 3.5 pF

MGM256

VDS = 5 V, GS= 3.3 mS, GL = 1 mS, f = 800 MHz.

L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.

L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.

L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH.

Fig.17 Gain test circuit.

1997 Dec 02

8

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