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BDX87B View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
BDX87B
Iscsemi
Inchange Semiconductor Iscsemi
BDX87B Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX87/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A
80V(Min)- BDX87B; 100V(Min)- BDX87C
·Complement to Type BDX88/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BDX87
45
UNIT
BDX87A
60
VCBO
Collector-Base Voltage
V
BDX87B
80
BDX87C 100
BDX87
45
BDX87A
60
VCEO
Collector-Emitter Voltage
V
BDX87B
80
BDX87C 100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
18
A
IBB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
200
mA
120
W
200
Tstg
Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.45 /W
isc Websitewww.iscsemi.cn
 

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