BDX62B View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BDX62B Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX62/A/B/C
DESCRIPTION
·Collector Current -IC= -8A
·High DC Current Gain-hFE= 1000(Min)@ IC= -3A
·Complement to Type BDX63/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX62
-80
VCBO
Collector-Base
Voltage
BDX62A
-100
V
BDX62B
-120
BDX62C
-140
BDX62
-60
VCEO
Collector-Emitter
Voltage
BDX62A
-80
V
BDX62B
-100
BDX62C
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.15
A
90
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.94 ℃/W
isc Website：www.iscsemi.cn
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