BDX62C View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BDX62C Datasheet PDF : 4 Pages
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BDX62 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCEV
VEBO
IC
IB
PT
TJ
TS
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
VBE=-1.5 V
IC(RMS)
ICM
@ TC = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
Value
-60
-80
-100
-120
-60
-80
-100
-120
-5.0
-8
-12
-0.15
90
-55 to +200
Unit
V
V
V
A
A
W
°C
Value
1.94
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
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