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BDX45 データシートの表示(PDF) - Comset Semiconductors

部品番号コンポーネント説明メーカー
BDX45 SILICON PLANAR DARLINGTON TRANSISTORS Comset
Comset Semiconductors 
BDX45 Datasheet PDF : 3 Pages
1 2 3
PNP BDX45 – BDX46 – BDX47
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
- ICES
Collector cut-off current
VBE = 0 ; -VCE = 45V
VBE = 0 ; -VCE = 60V
VBE = 0 ; -VCE = 80V
BDX45 -
BDX46 -
BDX47 -
BDX45 -
- 10
- 10 µA
- 10
- 10
- IEBO
Emitter cut-off current IC =0 ; VEB = 4V
BDX46 -
BDX47 -
- 10 µA
- 10
-IC=500 mA, -IB=0.5 mA
BDX45
BDX46
-
-
- 1.3
- 1.3
BDX47 -
- 1.3
- VCE(SAT)
Collector-Emitter
saturation Voltage (*)
-IC=1.0 A, -IB=1.0 mA BDX46 -
-IC=1.0 A, -IB=4.0 mA
BDX45 -
BDX47 -
-IC=500 mA, -IB=0.5 mA
Tj=150 °C
BDX45
BDX46
BDX47
-
-
-
- 1.6
- 1.6
- 1.6
- 1.3 V
- 1.3
- 1.3
-IC=1.0 A, -IB=1.0 mA
Tj=150 °C
BDX46 -
- 1.8
-IC=1.0 A, -IB=4.0 mA
Tj=150 °C
BDX45 -
BDX47 -
- 1.6
- 1.6
BDX45 -
- 1.9
-IC=500 mA, -IB=0.5 mA BDX46 -
- VBE(SAT)
Base-Emitter saturation
Voltage (*)
-IC=1.0 A, -IB=1.0 mA
BDX47 -
BDX46 -
-IC=1.0 A, -IB=4.0 mA
BDX45 -
BDX47 -
- 1.9
-
-
1.9
2.2
V
- 2.2
- 2.2
hFE
DC Current Gain
-VCE=10.0 V
-IC=150 mA
-VCE=10.0 V
-IC=500 mA
BDX45 1000 -
-
BDX46 1000 -
-
BDX47 1000 -
BDX45 2000 -
-
-
-
BDX46 2000 -
-
BDX47 2000 -
-
hfe
Small Signal Current
Gain
-VCE=5.0 V, -IC=500 mA
f=35MHz
BDX45
BDX46
BDX47
-
-
-
10
10
10
-
-
-
-
ton
Turn-on time
toff
Turn-off time
ton
Turn-on time
toff
Turn-off time
-IC=500 mA
-IBon= IBoff=0.5 mA
-IC=1 A
-IBon= IBoff=1.0 mA
- 400 -
- 1500 -
ns
- 400 -
- 1500 -
ns
24/10/2012
COMSET SEMICONDUCTORS
2|3
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