BDX53F View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
| BDX53F Datasheet PDF : 0 Pages | |||
BDX53F
®
BDX54F
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53F is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications. The complementary PNP
type is BDX54F.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at Tc ≤ 25 oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
NPN
PNP
October 2003
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
Value
BDX53F
BDX54F
160
160
5
8
12
0.2
60
-65 to 150
150
Unit
V
V
V
A
A
A
W
oC
oC
1/4
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