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BDW52B View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
BDW52B
Iscsemi
Inchange Semiconductor Iscsemi
BDW52B Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDW52/A/B/C
DESCRIPTION
·Collector Current -IC= -15A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A
-80V(Min)- BDW52B; -100V(Min)- BDW52C
·Complement to Type BDW51/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDW52
-45
VCBO
Collector-Base
Voltage
BDW52A
-60
V
BDW52B
-80
BDW52C
-100
BDW52
-45
VCEO
Collector-Emitter
Voltage
BDW52A
-60
V
BDW52B
-80
BDW52C
-100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
ICM
Collector Current-Peak
-20
A
IBB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
-7
A
125
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.4
UNIT
/W
isc Websitewww.iscsemi.cn
 

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