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BDW84 View Datasheet(PDF) - Bourns, Inc

Part Name
Description
Manufacturer
BDW84 Datasheet PDF : 5 Pages
1 2 3 4 5
BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VBE(on)
VCE(sat)
VEC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
IC = -30 mA IB = 0
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VEB = -5 V
VCE = -3 V
VCE = -3 V
VCE = -3 V
IB = -12 mA
IB = -150 mA
IE = -15 A
IB = 0
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = -6 A
IC = -15 A
IC = -6 A
IC = -6 A
IC = -15 A
IB = 0
(see Note 5)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
-45
-60
-80
-100
-120
750
100
-1
-1
-1
-1
-1
-0.5
-0.5
-0.5
-0.5
-0.5
-5
-5
-5
-5
-5
-2
20000
-2.5
-2.5
-4
-3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
0.83 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff
Turn-off time
IC = -10 A
VBE(off) = 4.2 V
IB(on) = -40 mA
RL = 3
IB(off) = 40 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.9
µs
7
µs
PRODUCT INFORMATION
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
 

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