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BD131 View Datasheet(PDF) -

Part Name
Description
Manufacturer
BD131
 
BD131 Datasheet PDF : 0 Pages
Philips Semiconductors
NPN power transistor
Product specification
BD131
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
note 1
thermal resistance from junction to mounting base
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
VALUE
100
6
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
fT
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 50 V
IE = 0; VCB = 50 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 0.5 A; VCE = 12 V; (see Fig.2) 40
IC = 2 A; VCE = 1 V; (see Fig.2)
20
IC = 0.5 A; IB = 50 mA
IC = 2 A; IB = 200 mA
IC = 0.5 A; IB = 50 mA
IC = 2 A; IB = 200 mA
IC = 0.25 A; VCE = 5 V; f = 100 MHz; 60
Tamb = 25 °C
MAX.
50
10
50
300
700
1.2
1.5
UNIT
nA
µA
nA
mV
mV
V
V
MHz
1999 Apr 12
3
 

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