BCW61DLT1 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
BCW61DLT1 Datasheet PDF : 8 Pages
| |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW61BLT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
BCW61BLT1
BCW61CLT1
BCW61DLT1
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
Value
–32
–32
–5.0
–100
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = –1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –32 Vdc)
(VCE = –32 Vdc, TA = 150°C)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICES
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Max
Unit
–32
—
Vdc
–5.0
—
Vdc
—
–20
nAdc
—
–20
µAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
|
|
Share Link: 