Philips Semiconductors
PNP general purpose double transistor
Product specification
BC807DS
FEATURES
• High current (500 mA)
• 600 mW total power dissipation
• Replaces two SOT23 packaged transistors on same
PCB area.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
collector-emitter voltage
collector current (DC)
peak collector current
MAX. UNIT
−45 V
−500 mA
−1
A
APPLICATIONS
• General purpose switching and amplification
• Push-pull amplifiers
• Multi-phase stepper motor drivers.
DESCRIPTION
PNP transistor pair in a SOT457 (SC-74) plastic package.
MARKING
PINNING
PIN
1, 4 emitter
2, 5 base
6, 3 collector
6 54
TYPE NUMBER
BC807DS
MARKING CODE
N2
1 23
Top view
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
65 4
TR2
TR1
MAM457
123
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per transistor unless otherwise specified
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot
total power dissipation
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 1
−
−50 V
−
−45 V
−
−5
V
−
−500 mA
−
−1
A
−
−200 mA
−
370 mW
−65 +150 °C
−
150 °C
−65 +150 °C
−
600 mW
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2002 Nov 22
2