Philips Semiconductors
BAT54VV
Schottky barrier triple diode in ultra small SOT666 package
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
see Figure 1;
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR
reverse current
VR = 25 V; see Figure 2
Cd
diode capacitance VR = 1 V; f = 1 MHz;
see Figure 3
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ Max Unit
[1]
-
-
240 mV
-
-
320 mV
-
-
400 mV
-
-
500 mV
-
-
800 mV
-
-
2
µA
-
-
10 pF
9397 750 13524
Product data sheet
Rev. 01 — 14 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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