DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

FMB150 View Datasheet(PDF) - Advanced Semiconductor

Part Name
Description
Manufacturer
FMB150
ASI
Advanced Semiconductor ASI
FMB150 Datasheet PDF : 1 Pages
1
FMB150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI FMB150 is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC
16 A
VCBO
60 V
VCEO
25 V
VCES
60 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
230 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.1 OC/W
PACKAGE STYLE .500 4L FLG
A
FULL R
C
B
.112x45°
L
Ø.125 NOM.
E
H
DF
G
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10588
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCER
IC = 100 mA
RBE = 10
BVCEO
IC = 100 mA
BVEBO
IE = 20 mA
hFE
VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
60
55
25
4.0
20
150
UNITS
V
V
V
V
---
COB
VCB = 28 V
f = 1.0 MHz
140
pF
PG
VCC = 28 V
POUT = 150 W
f = 108 MHz
9.0
dB
ηC
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]