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AS29LV016J View Datasheet(PDF) - Austin Semiconductor

Part NameDescriptionManufacturer
AS29LV016J 16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory AUSTIN
Austin Semiconductor AUSTIN
AS29LV016J Datasheet PDF : 40 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Austin Semiconductor, Inc.
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should
remain at VIH. The BYTE# pin determines whether the
device outputs array data in words or bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid addresses
on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read
access until the command register contents are altered.
See Reading Array Data on page 17 for more information.
Refer to the AC Read Operations on page 29 for timing
specifications and to Figure 12, on page 29 for the timing
diagram. ICC1 in the DC Characteristics table represents
the active current specification for reading array data.
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. See Word Byte Configuration on page 6 for more
An erase operation can erase one sector, multiple sectors,
or the entire device. Table 2 on page 9 and Table 3 on
page 10 indicate the address space that each sector
occupies. A “sector address” consists of the address bits
required to uniquely select a sector. The Command
Definitions on page 17 has details on erasing a sector or
the entire chip, or suspending/resuming the erase
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal
register (which is separate from the memory array) on
DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to Autoselect Mode on page 11 and
Autoselect Command Sequence on page 17 for more
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. AC
Characteristics on page 29 contains timing specification
tables and timing diagrams for write operations.
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to Write Operation Status
on page 22 for more information, and to AC
Characteristics on page 29 for timing diagrams.
The device features an Unlock Bypass mode to facilitate
faster programming. Once the device enters the Unlock
Bypass mode, only two write cycles are required to
program a word or byte, instead of four. Word Byte
Program Command Sequence on page 18 has details
on programming data to the device using both standard
and Unlock Bypass command sequences.
Rev. 0.0 02/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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