COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016J
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Typ1
0.5
16
6
6
Max2
10
150
Unit
Comments
s Excludes 00h programming
s prior to erasure4
µs Excludes system level
µs overhead5
Notes:
1.Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles, checkerboard data pattern.
2.Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3.The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program
faster than the maximum program times listed.
4.In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5.System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 9
on page 21 for further information on command definitions.
6.The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description Test Setup Package Typ
CIN
Input Capacitance
VIN=0
TSOP
6
COUT
Output Capacitance
VOUT=0
TSOP
8.5
CIN2
Control Pin Capacitance
VIN=0
TSOP
7.5
Notes:
1. Samples, not 100% tested.
2. Test conditions T A =25 o C, f=1.0 MHz
Max
7.5
12
9
Unit
pF
pF
pF
AS29LV016J
Rev. 0.0 02/09
38
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.