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AS29LV016J View Datasheet(PDF) - Austin Semiconductor

Part NameDescriptionManufacturer
AS29LV016J 16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory AUSTIN
Austin Semiconductor AUSTIN
AS29LV016J Datasheet PDF : 40 Pages
First Prev 31 32 33 34 35 36 37 38 39 40
COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016J
AC CHARACTERISTICS
Addresses
Program Command Sequence (last two cycles)
tWC
tAS
555h
PA
tAH
CE#
OE#
WE#
Data
tCH
tWP
tCS
tWPH
tDS
tDH
A0h
RY/BY#
VCC
tVCS
PD
tBUSY
Read Status Data (last two cycles)
PA
PA
tWHWH1
Status
DOUT
tRB
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 16. Program Operation Timings
Addresses
CE#
Erase Command Sequence (last two cycles)
tWC
2AAh
tAS
SA
555h for chip erase
tAH
Read Status Data
VA
VA
OE#
WE#
Data
tCH
tWP
tCS
tWPH
tDS
tDH
55h
RY/BY#
VCC
tVCS
30h
10 for Chip Erase
tBUSY
tWHWH2
In
Progress
Complete
tRB
Notes: Notes:
1.SA = s1e. cStoAr=asdedctroersasdd(rfeosrs S(feocr tSoerctEorraEsreas)e,),VVAA == VVaalildidAdAddredsrsefsosr rfeoardirnegasdtaintugs dsatatatu(sseedaWtarit(esOepeerWatrioitneSOtaptuesraotnion Status
on page 22p)a.ge 31).
2. Illustration shows device in word mode.
2.Illustration shows device in word mode.
Figure 17. Chip/Sector Erase Operation Timings
AS29LV016J
Rev. 0.0 02/09
33
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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