AS29LV016JBRG View Datasheet(PDF) - Austin Semiconductor

Part Name

Description

Manufacturer

AS29LV016JBRG

16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory

Austin Semiconductor 

COTS PEM

BOOT SECTOR FLASH

Austin Semiconductor, Inc.

AS29LV016J

AC CHARACTERISTICS

CE#

WE#

The falling edge of the last W

BYTE#

tSET

(tAS)

tHOLD (tAH)

Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.

Figure 15. BYTE# Timings for Write Operations

Erase / Program Operations

Parameter

JEDEC

tAVAV

tAVWL

tWLAX

tDVWH

tWHDX

Std

tWC

tAS

tAH

tDS

tDH

tOES

tGHWL

tGHWL

tELWL

tWHEH

tWLWH

tWHWL

tCS

tCH

tWP

tWPH

tSR/W

tWHWH1

tWHWH1

tWHWH2

tWHWH2

tVCS

tRB

tBUSY

Description

Write Cycle Time1

Address Setup Time

Address Hold Time

Data Setup Time

Data Hold Time

Output Enagle Setup Time

Read Recovery Time Before Write,

(OE# High to WE# Low)

CE# Setup Time

CE# Hold Time

Write Pulse Width

Write Pulse Width High

Latency Between Read and Write Operations

Programming Operation2

Sector Erase Operation2

VCC Setup Time1

Recovery Time from RY / BY#

Program / Erase Valid to RY / BY# Delay

Byte

Word

Test Setup

Min

Typ

Min

Max

Notes:

1. Not 100% Tested.

2. See Erase and Programming Performance on page 38 for more information.

Speed Options

70

55

70

55

0

45

35

35

0

0

0

0

0

35

25

20

6

6

0.5

50

0

90

Unit

ns

µs

sec

µs

ns

AS29LV016J

Rev. 0.0 02/09

32

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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