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AS29LV016J View Datasheet(PDF) - Austin Semiconductor

Part NameDescriptionManufacturer
AS29LV016J 16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory AUSTIN
Austin Semiconductor AUSTIN
AS29LV016J Datasheet PDF : 40 Pages
First Prev 31 32 33 34 35 36 37 38 39 40
COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016J
AC CHARACTERISTICS
CE#
WE#
The falling edge of the last W
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 15. BYTE# Timings for Write Operations
Erase / Program Operations
Parameter
JEDEC
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
Std
tWC
tAS
tAH
tDS
tDH
tOES
tGHWL
tGHWL
tELWL
tWHEH
tWLWH
tWHWL
tCS
tCH
tWP
tWPH
tSR/W
tWHWH1
tWHWH1
tWHWH2
tWHWH2
tVCS
tRB
tBUSY
Description
Write Cycle Time1
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enagle Setup Time
Read Recovery Time Before Write,
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation2
Sector Erase Operation2
VCC Setup Time1
Recovery Time from RY / BY#
Program / Erase Valid to RY / BY# Delay
Byte
Word
Test Setup
Min
Typ
Min
Max
Notes:
1. Not 100% Tested.
2. See Erase and Programming Performance on page 38 for more information.
Speed Options
70
55
70
55
0
45
35
35
0
0
0
0
0
35
25
20
6
6
0.5
50
0
90
Unit
ns
µs
sec
µs
ns
AS29LV016J
Rev. 0.0 02/09
32
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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