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AS29LV016J View Datasheet(PDF) - Austin Semiconductor

Part NameDescriptionManufacturer
AS29LV016J 16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory AUSTIN
Austin Semiconductor AUSTIN
AS29LV016J Datasheet PDF : 40 Pages
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COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016J
GENERAL DESCRIPTION
The AS29LV016J is a 16 Mbit, 3.0 Volt-only Flash memory
organized as 2,097,152 bytes or 1,048,576 words. The device
is offered in a 48-pin TSOP package. The word-wide data
(x16) appears on DQ15–DQ0; the byte-wide (x8) data appears
on DQ7–DQ0. This device is designed to be programmed in-
system with the standard system 3.0 volt VCC supply. A 12.0 V
VPP or 5.0 VCC are not required for write or erase operations.
The device can also be programmed in standard EPROM
programmers.
The device offers access time of 55 ns allowing high speed
microprocessors to operate without wait states. To eliminate
bus contention the device has separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
The AS29LV016J is entirely command set compatible with
the JEDEC single-power-supply Flash standard. Commands
are written to the command register using standard
microprocessor write timings. Register contents serve as
input to an internal state-machine that controls the erase
and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded Program
algorithm—an internal algorithm that automatically times the
program pulse widths and verifies proper cell margin. The
Unlock Bypass mode facilitates faster programming times
by requiring only two write cycles to program data instead of
four.
Device erasure occurs by executing the erase command
sequence. This initiates the Embedded Erase algorithm—an
internal algorithm that automatically preprograms the array
(if it is not already programmed) before executing the erase
operation. During erase, the device automatically times the
erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase
operation is complete by observing the RY/BY# pin, or by
reading the DQ7 (Data# Polling) and DQ6 (toggle) status
bits. After a program or erase cycle has been completed, the
device is ready to read array data or accept another
command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents
of other sectors. The device is fully erased when shipped
from the factory.
Hardware data protection measures include a low VCC
detector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any
combination of the sectors of memory. This can be achieved
in-system or via programming equipment.
The Erase Suspend/Erase Resume feature enables the user
to put erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for erasure.
True background erase can thus be achieved.
The hardware RESET# pin terminates any operation in
progress and resets the internal state machine to reading
array data. The RESET# pin may be tied to the system reset
circuitry. A system reset would thus also reset the device,
enabling the system microprocessor to read the boot-up
firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of time,
the device enters the automatic sleep mode. The system
can also place the device into the standby mode. Power
consumption is greatly reduced in both these modes.
ASI combines years of flash memory manufacturing
experience to produce the highest levels of quality, reliability
and cost effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The data is programmed using hot electron
injection.
AS29LV016J
Rev. 0.0 02/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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