AS29LV016JBRG-70/ET View Datasheet(PDF) - Austin Semiconductor

Part Name

Description

Manufacturer

AS29LV016JBRG-70/ET

16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory

Austin Semiconductor 

COTS PEM

BOOT SECTOR FLASH

Austin Semiconductor, Inc.

AS29LV016J

Table 6: System Interface String

Addresses Addresses

(Word Mode) (Byte Mode)

Data

1Bh

36h

0027h

1Ch

38h

0036h

1Dh

3Ah

0000h

1Eh

3Ch

0000h

1Fh

3Eh

0003h

20h

40h

0000h

21h

42h

0009h

22h

44h

0000h

23h

46h

0005h

24h

48h

0000h

25h

4Ah

0004h

26h

4Ch

0000h

Table 7: Device Geometry Definition

Description

VCC Min. (write/erase) D7-D4:volt, D3-D0: 100 millivolt

VCC Max. (write/erase) D7-D4:volt, D3-D0:100 millivolt

VPP Min. voltage (00h=no VPP pin present)

VPP Max. voltage (00h=no VPP pin present)

Typical timeout per single byte/word write 2N µs

Typical timeout for Min. size buffer write 2N µs (00h=not supported)

Typical timeout per individual block erase 2N ms

Typical timeout for full chip erase 2N ms (00h=not supported)

Max. timeout for byte/word write 2N times typical

Max. timeout for buffer write 2N times typical

Max. timeout per individual block erase 2N times typical

Max. timeout for full chip erase 2N times typical (00h=not supported)

Addresses

(Word Mode)

27h

28h

29h

2Ah

2Bh

2Ch

2Dh

2Eh

2Fh

30h

31h

32h

33h

34h

35h

36h

37h

38h

39h

3Ah

3Bh

3Ch

Addresses

(Byte Mode)

4Eh

50h

52h

54h

56h

58h

5Ah

5Ch

5Eh

60h

62h

64h

66h

68h

6Ah

6Ch

6Eh

70h

72h

74h

76h

78h

Data

0015h

0002h

0000h

0000h

0000h

0004h

0000h

0000h

0040h

0000h

0001h

0000h

0020h

0000h

0000h

0000h

0080h

0000h

001Eh

0000h

0000h

0001h

Device Size = 2N Byte

Description

Flash Device Interface description (refer to CFI publication 100)

Max. number of byte in multi-byte write = 2N (00h= not supported)

Number of Erase Block Regions within device

Erase Block Region 1 Information

(refer to the CFI specification or CFI publication 100)

Erase Block Region 2 Information

Erase Block Region 3 Information

Erase Block Region 4 Information

AS29LV016J

Rev. 0.0 02/09

15

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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