RFP2N08 View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
RFP2N08 Datasheet PDF : 4 Pages
| |||
RFP2N08, RFP2N10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP2N08
RFP2N10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
80
80
2
5
±20
25
0.2
-55 to 150
300
260
100
100
2
5
±20
25
0.2
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0
RFP2N10
100
RFP2N08
80
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS = VDS, ID = 250µA (Figure 8)
2
IDSS
VDS = Rated BVDSS, TC = 25oC
-
VDS = 0.8 x Rated BVDSS, TC = 125oC -
IGSS VGS = ±20V, VDS = 0
-
rDS(ON) ID = 2A, VGS = 10V (Figures 6, 7)
-
VDS(ON) ID = 2A, VGS = 10V
-
td(ON) ID ≈ 1A, VDD = 50V, RG = 50Ω,
-
tr
RL = 25Ω, VGS = 10V
(Figures 10, 11, 12)
-
td(OFF)
-
tf
-
CISS VGS = 0V, VDS = 25V, f =1MHz
-
(Figure 9)
COSS
-
CRSS
-
RθJC
-
Source to Drain Diode Specifications
TYP MAX UNITS
-
-
V
-
-
V
-
4
V
-
1
µA
-
25
µA
- ±100 nA
-
1.05 Ω
-
2.1
V
17
25
ns
30
45
ns
30
45
ns
17
25
ns
-
200 pF
-
80
pF
-
25
pF
-
5 oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Diode Reverse Recovery Time
trr
ISD = 2A, dISD/dt = 50A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
1.4
V
-
100
-
ns
5-2
|
|
Share Link: 