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AP9916GH View Datasheet(PDF) - Advanced Power Electronics Corp

Part Name
Description
Manufacturer
AP9916GH
A-POWER
Advanced Power Electronics Corp A-POWER
AP9916GH Datasheet PDF : 6 Pages
1 2 3 4 5 6
Advanced Power
Electronics Corp.
AP9916GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
D
Capable of 2.5V gate drive
Low drive current
Surface mount package
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
18V
25mΩ
35A
GD S
TO-252
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=125
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251
Rating
18
±8
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
2.5
110
Unit
/W
/W
Data and specifications subject to change without notice
200723011
 

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