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D1008UK Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

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D1008UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET Semelab
Semelab - > TT Electronics plc  Semelab
D1008UK Datasheet PDF : 4 Pages
1 2 3 4
D1008UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs
Forward Transconductance *
GPS
η
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 2A
TOTAL DEVICE
PO = 80W
VDS = 28V
IDQ = 0.4A
f = 400MHz
1
1.6
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 28V
VDS = 28V
VDS = 28V
PER SIDE
VGS = –5V
VGS = 0
VGS = 0
f = 1MHz
f = 1MHz
f = 1MHz
Typ.
Max. Unit
V
2
mA
1
µA
7
V
S
dB
%
120 pF
60
pF
5
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
9/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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