AP70T03GSP View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
Manufacturer
AP70T03GSP Datasheet PDF : 4 Pages
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200
T C =25 o C
150
100
10V
8.0V
6.0V
50
V G =4.0V
0
0.0
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D =20A
T C =25 ℃
40
20
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =175 o C
1
T j =25 o C
0.1
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
120
T C =175 o C
90
AP70T03GS/P
10V
8.0V
6.0V
60
30
V G =4.0V
0
0.0
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
I D =33A
V G =10V
1.4
1.2
1.0
0.8
0.6
-50
25
100
175
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
2.1
1.7
1.3
0.9
-50
25
100
175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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