4310M View Datasheet(PDF) - BCD Semiconductor
Part Name
Description
Manufacturer
4310M Datasheet PDF : 11 Pages
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DUAL OP AMP AND VOLTAGE REFERENCE
Electrical Characteristics
Operating Conditions: VCC =+5V, TA=25oC unless otherwise specified.
Parameter
Conditions
Total Supply Current, excluding Cur- VCC=5V, no load, -40oC≤TA≤105oC
rent in Voltage Reference
VCC=30V, no load, -40oC≤TA≤105oC
Voltage Reference Section
AP4310A
TA=25oC
Reference Voltage
IK=10mA -40oC≤TA≤105oC
AP4310
TA=25oC
-40oC≤TA≤105oC
Reference Voltage Deviation
Over Full Temperature Range
IK=10mA, TA=-40 to 105oC
Minimum Cathode Current
for Regulation
Dynamic Impedance
IK=1.0 to 80mA, f<1kHz
Op Amp 1 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted)
Input Offset Voltage
TA=25oC
TA=-40 to 105oC
Input Offset Voltage
Temperature Drift
TA=-40 to 105oC
Input Bias Current (Inverting Input TA=25oC
Only)
Large Signal Voltage Gain
VCC=15V, RL=2kΩ, VO=1.4 to 11.4V
Power Supply Rejection Ratio
VCC=5 to 30V
Output Current
Source
Sink
VCC=15V, VID =1V, VO=2V
VCC=15V, VID=-1V, VO=2V
Output Voltage Swing (High)
VCC=30V, RL=10kΩ, VID=1V
Output Voltage Swing (Low)
VCC=30V, RL =10kΩ, VID=-1V
Slew Rate
Unity Gain Bandwidth
VCC=18V, RL=2kΩ, AV =1,
VIN=0.5 to 2V, CL =100pF
VCC=30V, RL =2kΩ, CL=100pF
Data Sheet
AP4310
Min Typ Max Unit
0.15 0.25
mA
0.20 0.30
2.49 2.50 2.51
V
2.48 2.50 2.52
2.475 2.50 2.525
V
2.45 2.50 2.55
5
24
mV
0.01 0.05 mA
0.2
0.5
Ω
0.5
3
mV
5
7
µV/oC
20
150
nA
85 100
dB
70
90
dB
20
40
mA
7
20
mA
27
28
V
17
100
mV
0.2 0.5
V/µ s
0.7 1.0
MHz
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
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