Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

D1011UK Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

Número de piezacomponentes DescripciónFabricante
D1011UK METAL GATE RF SILICON FET Semelab
Semelab - > TT Electronics plc  Semelab
D1011UK Datasheet PDF : 2 Pages
1 2
D1011UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs
Forward Transconductance*
GPS Common Source Power Gain
η
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 10W
VDS = 28V
f = 1GHz
VDS = 0
VDS = VGS
ID = 1A
IDQ = 0.1A
1
0.8
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0V
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1
mA
1
µA
7
V
S
dB
%
60
pF
30
pF
2.5
pF
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]