AOD474 View Datasheet(PDF) - Alpha and Omega Semiconductor
Part Name
Description
Manufacturer
AOD474 Datasheet PDF : 6 Pages
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AOD474
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
75
IDSS
Zero Gate Voltage Drain Current
VDS=75V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS，ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
18
VGS=10V, ID=5A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=2A
gFS
Forward Transconductance
VDS=5V, ID=5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
V
1
µA
5
±100 nA
1.8 2.4
V
A
105 130
mΩ
190 235
120 155 mΩ
10
S
0.75 1
V
10
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=37.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
280
pF
30
pF
13
pF
1.1 2.2 3.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6
9
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=37.5V, ID=5A
3
5
nC
1.2
nC
Qgd
Gate Drain Charge
1.5
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
VGS=10V, VDS=37.5V, RL=7.5Ω,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
16
ns
tf
Turn-Off Fall Time
3.5
ns
trr
Body Diode Reverse Recovery Time IF=5A, dI/dt=500A/µs
14
ns
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs
52
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2012
www.aosmd.com
Page 2 of 6
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