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L128ML123N View Datasheet(PDF) - Advanced Micro Devices

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L128ML123N Datasheet PDF : 66 Pages
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DATA SHEET
Am29LV128MH/L
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/OControl
This product has been retired and is not recommended for designs. For new and current designs, S29GL256N supersedes Am29LV128MH/L and is the factory-rec-
ommended migration path. Please refer to the S29GL256N datasheet for specifications and ordering information. Availability of this document is retained for refer-
ence and historical purposes only..
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
„ Single power supply operation
— 3 volt read, erase, and program operations
„ VersatileI/Ocontrol
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ
inputs/outputs as determined by the voltage on the
VIO pin; operates from 1.65 to 3.6 V
„ Manufactured on 0.23 µm MirrorBit process
technology
„ Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
„ Flexible sector architecture
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
„ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
„ Minimum 100,000 erase cycle guarantee per sector
„ 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
„ High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 s typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
„ Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
„ Package options
— 56-pin TSOP
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
„ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
„ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Group Unprotect: VID-level method
of changing code in locked sector groups
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 25270 Rev: C Amendment: 7
Issue Date: January 31, 2007
 

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