Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site


ADR435ARZ View Datasheet(PDF) - Analog Devices

Part NameADR435ARZ ADI
Analog Devices ADI
DescriptionUltralow Noise XFET® Voltage References with Current Sink and Source Capability
ADR435ARZ Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR439 ELECTRICAL CHARACTERISTICS
VIN = 6.5 V to 18 V, IL = 0 mV, TA = 25°C, unless otherwise noted.
Table 7.
Parameter
OUTPUT VOLTAGE
A Grade
B Grade
INITIAL ACCURACY1
A Grade
B Grade
TEMPERATURE COEFFICIENT
A Grade
B Grade
LINE REGULATION
LOAD REGULATION
QUIESCENT CURRENT
VOLTAGE NOISE
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY2
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
SUPPLY VOLTAGE OPERATING RANGE
SUPPLY VOLTAGE HEADROOM
Symbol
VO
VOERR
TCVO
∆VO/∆VIN
∆VO/∆IL
∆VO/∆IL
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN − VO
Conditions
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 6.5 V to 18 V, −40°C < TA < +125°C
IL = 0 mA to 10 mA, VIN = 6.5 V, −40°C < TA < +125°C
IL = −10 mA to 0 mA, VIN = 6.5 V, −40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
CL = 0 μF
1000 hours
fIN = 1 kHz
Min
4.4946
4.498
6.5
2
Typ
4.500
4.500
2
1
5
600
7.5
110
10
40
20
−70
40
Max
4.5054
4.502
±5.5
±0.12
±2
±0.04
10
3
20
15
15
800
18
Unit
V
V
mV
%
mV
%
ppm/°C
ppm/°C
ppm/V
ppm/mA
ppm/mA
μA
μV p-p
nV/√Hz
μs
ppm
ppm
dB
mA
V
V
1 Initial accuracy does not include shift due to solder heat effect.
2 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
Rev. J | Page 9 of 24
Direct download click here
 
HOME 'ADR435ARZ' Search
Share Link : 
한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]