ADF4360 View Datasheet(PDF) - Analog Devices
Part Name
Description
Manufacturer
ADF4360 Datasheet PDF : 17 Pages
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ADF4360
PRELIMINARY TECHNICAL DATA
TIMING CHARACTERISTICS (AVDD = DVDD = VVCO = +3V ± 10%; AGND = DGND = 0 V; 1.8V and 3V Logic Levels Used; TA =
TMIN to TMAX unless otherwise noted)
Limit at
Parameter
TMIN to TMAX
(B Version)
Units
Test Conditions/Comments
t1
10
t2
10
t3
25
t4
25
t5
10
t6
20
ns min
ns min
ns min
ns min
ns min
ns min
DATA to CLOCK Set Up Time
DATA to CLOCK Hold Time
CLOCK High Duration
CLOCK Low Duration
CLOCK to LE Set Up Time
LE Pulse Width
NOTE
Guaranteed by Design but not Production Tested.
CLOCK
DATA DB23 (MSB)
t1
t2
DB22
LE
LE
t3
t4
DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t6
t5
Figure 1. Timing Diagram
ABSOLUTE MAXIMUM RATINGS1, 2
(TA = +25°C unless otherwise noted)
AVDD to GND3 ..................................–0.3 V to
+3.6 V
AVDD to DVDD .....................................–0.3 V to +0.3
V
VP to GND.........................................–0.3 V to +3.6 V
VVCO to GND......................................–0.3 V to +3.6 V
VVCO to AVDD ......................................–0.3 V to +0.3 V
Digital I/O Voltage to GND..........–0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND..........–0.3 V to VDD + 0.3 V
REFIN, to GND............................–0.3 V to VDD + 0.3 V
OperatingTemperature Range
Industrial (B Version).........................–40°C to +85°C
Maximum Junction Temperature........................+150°C
CSP θJA Thermal Impedance
(Paddle Soldered).......................................50°C/W
(Paddle Not Soldered).................................88°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec)......................................+215°C
Infrared (15 sec)............................................+220°C
1. Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
2. This device is a high-performance RF integrated circuit with an ESD rating of <
2kV and it is ESD sensitive. Proper precautions should be taken for handling and
assembly.
3. GND = AGND = DGND = 0V
TRANSISTOR COUNT
TBA (CMOS) and TBA (Bipolar)
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V
readily accumulate on the human body and test equipment and can discharge without
detection. Although the ADF4360 family features proprietary ESD protection circuitry,
permanent damage may occur on devices subjected to high-energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICEÎ
–4–
REV. PrP 01/03
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