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ADF4351BCPZ View Datasheet(PDF) - Analog Devices

Part Name
Description
Manufacturer
ADF4351BCPZ
ADI
Analog Devices ADI
ADF4351BCPZ Datasheet PDF : 28 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ADF4351
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to GND1
AVDD to DVDD
VVCO to GND1
VVCO to AVDD
Digital I/O Voltage to GND1
Analog I/O Voltage to GND1
REFIN to GND1
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Reflow Soldering
Peak Temperature
Time at Peak Temperature
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−40°C to +85°C
−65°C to +125°C
150°C
260°C
40 sec
1 GND = AGND = DGND = CPGND = SDGND = AGNDVCO = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Data Sheet
This device is a high performance RF integrated circuit with an
ESD rating of <1.5 kV and is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The transistor count for the ADF4351 is 36,955 (CMOS) and
986 (bipolar).
THERMAL RESISTANCE
Thermal impedance (θJA) is specified for a device with the
exposed pad soldered to GND.
Table 4. Thermal Resistance
Package Type
θJA
32-Lead LFCSP (CP-32-2)
27.3
Unit
°C/W
ESD CAUTION
Rev. 0 | Page 6 of 28
 

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