DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

MMBTH10LT1 View Datasheet(PDF) - Leshan Radio Company

Part Name
Description
Manufacturer
MMBTH10LT1
Leshan-Radio
Leshan Radio Company Leshan-Radio
MMBTH10LT1 Datasheet PDF : 4 Pages
1 2 3 4
LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
NPN Silicon
1
BASE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
V CEO
V CBO
V EBO
Value
25
30
3.0
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
MMBTH10LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
MMBTH10LT1 = 3EM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B= 0 )
Collector–Base Breakdown Voltage
(I C = 100 µAdc , I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc , I C= 0)
Collector Cutoff Current
( V CB = 25Vdc , I E = 0 )
Emitter Cutoff Current
( V EB = 2.0Vdc , I C= 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V (BR)CEO
25
V (BR)CBO
30
V (BR)EBO
3.0
I CBO
I EBO
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Typ
Max
Unit
Vdc
Vdc
Vdc
100
nAdc
100
nAdc
M33–1/4
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]