GS881Z36BGT-200I View Datasheet(PDF) - Giga Semiconductor

Part Name

Description

Manufacturer

GS881Z36BGT-200I

9Mb Pipelined and Flow Through Synchronous NBT SRAM

Giga Semiconductor 

DC Electrical Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZZ Input Current

FT, SCD, ZQ Input Current

Output Leakage Current

Output High Voltage

Output High Voltage

Output Low Voltage

GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D)

Symbol

IIL

IIN1

IIN2

IOL

VOH2

VOH3

VOL

Test Conditions

VIN = 0 to VDD

VDD ≥ VIN ≥ VIH

0 V ≤ VIN ≤ VIH

VDD ≥ VIN ≥ VIL

0 V ≤ VIN ≤ VIL

Output Disable, VOUT = 0 to VDD

IOH = –8 mA, VDDQ = 2.375 V

IOH = –8 mA, VDDQ = 3.135 V

IOL = 8 mA

Min

–1 uA

–1 uA

–1 uA

–100 uA

–1 uA

–1 uA

1.7 V

2.4 V

—

Max

1 uA

1 uA

100 uA

1 uA

1 uA

1 uA

—

—

0.4 V

Rev: 1.04 10/2004

21/39

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2002, GSI Technology

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