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GS881Z36BT-200 View Datasheet(PDF) - Giga Semiconductor

Part NameGS881Z36BT-200 GSI
Giga Semiconductor GSI
Description9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS881Z36BT-200 Datasheet PDF : 39 Pages
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GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D)
Undershoot Measurement and Timing
VIH
VSS
50%
VSS 2.0 V
50% tKC
Overshoot Measurement and Timing
VDD + 2.0 V
50%
50% tKC
VDD
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Input Capacitance
CIN
Input/Output Capacitance
CI/O
Note:
These parameters are sample tested.
Test conditions
VIN = 0 V
VOUT = 0 V
AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Typ. Max. Unit
4
5
pF
6
7
pF
Output Load 1
DQ
50
30pF*
VDDQ/2
* Distributed Test Jig Capacitance
Rev: 1.04 10/2004
20/39
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2002, GSI Technology
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