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M1A3P400-2PQG208Y View Datasheet(PDF) - Microsemi Corporation

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Description
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M1A3P400-2PQG208Y Datasheet PDF : 220 Pages
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ProASIC3 DC and Switching Characteristics
Table 2-29 • I/O Output Buffer Maximum Resistances 1
Applicable to Standard Plus I/O Banks
Standard
Drive Strength
3.3 V LVTTL / 3.3 V LVCMOS
2 mA
RPULL-DOWN ()2
100
RPULL-UP ()3
300
4 mA
100
300
6 mA
50
150
8 mA
50
150
12 mA
25
75
3.3 V LVCMOS Wide Range4
16 mA
100 µA
25
Same as regular
3.3 V LVCMOS
75
Same as regular
3.3 V LVCMOS
2.5 V LVCMOS
2 mA
100
200
4 mA
100
200
6 mA
50
100
8 mA
50
100
12 mA
25
50
1.8 V LVCMOS
2 mA
200
225
4 mA
100
112
6 mA
50
56
8 mA
50
56
1.5 V LVCMOS
2 mA
200
224
4 mA
100
112
3.3 V PCI/PCI-X
Per PCI/PCI-X
25
75
specification
Notes:
1. These maximum values are provided for informational reasons only. Minimum output buffer resistance
values depend on VCCI, drive strength selection, temperature, and process. For board design
considerations and detailed output buffer resistances, use the corresponding IBIS models located at
http://www.microsemi.com/soc/download/ibis/default.aspx.
2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec
3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec
4. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B
specification.
2-26
Revision 13
 

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