DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

M1A3P600-1FGG484YPP View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
M1A3P600-1FGG484YPP Datasheet PDF : 220 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
ProASIC3 DC and Switching Characteristics
Power Consumption of Various Internal Resources
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in ProASIC3 Devices
Device Specific Dynamic Contributions
(µW/MHz)
Parameter
Definition
PAC1
Clock contribution of a Global Rib
14.50 12.80 12.80 11.00 11.00 9.30 9.30 9.30
PAC2
Clock contribution of a Global Spine
2.48 1.85 1.35 1.58 0.81 0.81 0.41 0.41
PAC3
Clock contribution of a VersaTile row
0.81
PAC4
Clock contribution of a VersaTile used as a
0.12
sequential module
PAC5
First contribution of a VersaTile used as a
0.07
sequential module
PAC6
Second contribution of a VersaTile used as a
0.29
sequential module
PAC7
Contribution of a VersaTile used as a
0.29
combinatorial Module
PAC8
Average contribution of a routing net
0.70
PAC9
Contribution of an I/O input pin (standard
dependent)
See Table 2-8 on page 2-6 through
Table 2-10 on page 2-7.
PAC10
Contribution of an I/O output pin (standard
dependent)
See Table 2-11 on page 2-8 through
Table 2-13 on page 2-9.
PAC11
Average contribution of a RAM block during a
read operation
25.00
PAC12
Average contribution of a RAM block during a
write operation
30.00
PAC13
Dynamic contribution for PLL
2.60
Note: *For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi Power
spreadsheet calculator or SmartPower tool in Libero SoC software.
2-10
Revision 13
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]