8050SG-E-AE3-R View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
8050SG-E-AE3-R Datasheet PDF : 4 Pages
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8050S
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
700
mA
SOT-23
Collector Dissipation(Ta=25°C)
TO-92
PC
350
mW
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC = 100μA, IE = 0
BVCEO IC = 1mA, IB = 0
BVEBO IE = 100μA, IC =0
ICBO VCB = 30V,IE = 0
IEBO VEB = 5V, IC = 0
hFE1 VCE = 1V, IC = 1mA
hFE2 VCE = 1V, IC = 150 mA
hFE3 VCE = 1V, IC = 500mA
VCEO(SAT) IC = 500mA, IB = 50mA
VBEO(SAT) IC = 500mA, IB = 50mA
VBEO(SAT) VCE = 1V, IC = 10mA
fT
VCE = 10V, IC = 50mA
Cob VCB = 10V, IE = 0, f = 1MHz
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
MIN TYP MAX UNIT
30
V
20
V
5
V
1 uA
100 nA
100
400
120
40
0.5 V
1.2 V
1.0 V
100
MHz
9.0
pF
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-001,E
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